Vapor Deposition of Silicon-Containing Microstructured Polymer Films onto Silicone Oil Substrates
Vapor Deposition of Silicon-Containing Microstructured Polymer Films onto Silicone Oil Substrates
复制标题
含硅微结构聚合物薄膜在硅油基材上的气相沉积
DOI：
10.1021/acs.langmuir.1c02286
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发表时间：
2021
期刊：
影响因子：
3.9
通讯作者：
Gupta, Malancha
中科院分区：
文献类型：
--
作者：
Welchert, Nicholas A.;Nguyen, Bryan;Tsotsis, Theodore T.;Gupta, Malancha
在这项研究中，使用引发化学气相沉积（iCVD）将含硅交联聚合物，聚（1，3，5，7-四乙烯基-1，3，5，7-四甲基环四氢呋喃-co-乙二醇二丙烯酸酯）（p（V4 D4-co-EGDA））沉积到高粘度硅油上。系统研究了V4 D4和EGDA的进料流量比，并对薄膜的上、下表面的化学成分和形貌进行了分析。薄膜具有微结构，薄膜的孔隙率和厚度随着V4 D4含量的增加而增加。膜的顶部由密集堆积和松散堆积的微结构化区域组成。X射线光电子能谱的薄膜的顶面和底面上显示出一个不均匀的化学组成沿着的膜的厚度，与更高的硅含量相比，在顶面上的底面。据我们所知，这是首次研究在硅油上iCVD沉积含硅聚合物膜。本研究的结果可用于聚合物前体膜的合成，用于制造，通过热解，硅基无机膜用于在氢气生产中使用硅油，以防止单体渗透到下面的膜支撑结构在气相沉积过程中。
In this study, a silicon-containing cross-linked polymer, poly(1,3,5,7-tetravinyl-1,3,5,7-tetramethylcyclotetrasiloxane-co-ethylene glycol diacrylate) (p(V4D4-co-EGDA)), was deposited onto high-viscosity silicone oil using initiated chemical vapor deposition (iCVD). The ratio of the feed flow rate of V4D4 to EGDA was systematically studied, and the chemical composition and morphology of the top and bottom surfaces of the films were analyzed. The films were microstructured, and the porosity and thickness of the films increased with increasing V4D4 content. The top of the film was composed of densely packed and loosely packed microstructured regions. X-ray photoelectron spectroscopy on the top and bottom surfaces of the films showed a heterogeneous chemical composition along the thickness of the film, with higher silicon content on the top surface compared to that on the bottom surface. To the best of our knowledge, this is the first study of iCVD deposition of a silicon-containing polymer film onto silicone oil. The results of this study can be used for the synthesis of polymer precursor films for the fabrication, via pyrolysis, of silicon-based inorganic membranes for use in hydrogen production using silicone oil to prevent infiltration of monomer into the underneath membrane support structure during vapor deposition.