Aging dynamics of solution-processed amorphous oxide semiconductor field effect transistors.
Aging dynamics of solution-processed amorphous oxide semiconductor field effect transistors.
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DOI：
10.1021/am900855s
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发表时间：
2010-02
影响因子：
9.5
通讯作者：
Changdeuck Bae;Dongjo Kim;S. Moon;T. Choi;Youngmin Kim;Bo Sung Kim;Jang‐Sik Lee;Hyunjung Shin;Jooho Moon
中科院分区：
文献类型：
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作者：
Changdeuck Bae;Dongjo Kim;S. Moon;T. Choi;Youngmin Kim;Bo Sung Kim;Jang‐Sik Lee;Hyunjung Shin;Jooho Moon
这项研究确定了溶液处理的非晶In−Ga−Zn氧化物（a-IGZO）层作为透明柔性薄膜晶体管（TFT）应用的非晶氧化物半导体（AOS）的老化特性。使用开尔文探针力显微镜（KPFM）监测a-IGZO在真空退火后立即暴露于空气时的功函数。随着时间的推移，观察到的功函数增加。此外，X射线光电子能谱结合KPFM结果揭示了导致老化特征的两个相互竞争的因素：氧分子在薄膜内纳米孔表面的吸附，以及缺陷的产生，包括氧空位和锌间隙。虽然前者是可逆的，通过改变环境条件，后者是不可逆的。在修正能带理论的基础上，我们提出了一种基于多孔非晶结构和老化动力学的溶液处理AOS TFT的工作机制。The persp.
This study determined the aging characteristics of solution-processed amorphous In−Ga−Zn oxide (a-IGZO) layers as amorphous oxide semiconductors (AOSs) for transparent, flexible thin-film transistor (TFT) applications. The work function of a-IGZOs upon exposure to air immediately after vacuum annealing was monitored using Kelvin probe force microscopy (KPFM). An increase was observed in the work function with time. Additionally, X-ray photoelectron spectroscopy combined with the KPFM results revealed two competing factors responsible for the aging characteristics: adsorption of oxygen molecules on the nanopore surfaces within the films, and the creation of defects, including oxygen vacancies and zinc interstitials. Although the former was reversible by alteration of ambient conditions, the latter was irreversible. On the basis of modified band theory, we proposed an operative mechanism for solution-processed AOS TFTs based on both the nature of porous amorphous structures and the aging dynamics. The persp...