Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy
Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy
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DOI：
10.1088/0957-4484/23/1/015605
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发表时间：
2012-01-13
期刊：
影响因子：
3.5
通讯作者：
Forchel, A.
中科院分区：
文献类型：
--
作者：
Roedel, R.;Bauer, A.;Forchel, A.
我们展示了一种通过生长中断的循环沉积来可控降低自组装 InP 量子点 (QD) 密度的方法。对于相同的沉积 InP 总量，改变循环次数可以将 QD 密度从 7.4 x 10(10) cm(-2) 降低到 1.8 x 10(9) cm(-2)。同时，可以观察到量子点尺寸的系统增加。分析了不同尺寸InP量子点的发射特性。激发功率相关和时间分辨测量证实了大 InP 量子点从 I 型到 II 型能带排列的转变。在脉冲激发下进行的 I 型 QD 的光子自相关测量揭示了单光子发射器预期的明显反聚束 (g((2))(tau = 0) = 0.06 +/- 0.03）。所描述的
We demonstrate a method to controllably reduce the density of self-assembled InP quantum dots (QDs) by cyclic deposition with growth interruptions. Varying the number of cycles enabled a reduction of the QD density from 7.4 x 10(10) cm(-2) to 1.8 x 10(9) cm(-2) for the same total amount of deposited InP. Simultaneously, a systematic increase of the QD size could be observed. Emission characteristics of different-sized InP QDs were analyzed. Excitation power dependent and time-resolved measurements confirm a transition from type I to type II band alignment for large InP quantum dots. Photon autocorrelation measurements of type I QDs performed under pulsed excitation reveal pronounced antibunching (g((2))(tau = 0) = 0.06 +/- 0.03) as expected for a single-photon emitter. The described