Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.
Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.
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DOI：
10.1021/acs.nanolett.6b04675
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发表时间：
2017-02
期刊：
影响因子：
10.8
通讯作者：
Zhiqiang Mu;Haochi Yu;Miao Zhang;Aimin Wu;G. Qi;P. Chu;Z. An;Z. Di;Xi Wang
中科院分区：
文献类型：
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作者：
Zhiqiang Mu;Haochi Yu;Miao Zhang;Aimin Wu;G. Qi;P. Chu;Z. An;Z. Di;Xi Wang
除了众所周知的量子限制效应外，间接带隙硅的热致发光由于声子辅助的光发射，为实现单片集成硅光电子学提供了一条新的、有前途的途径。在这项工作中，通过引入支持光子-等离子体混合模式的梯形纳米腔，从硅纳米线阵列中产生了多波段热致发光。通过不断调整具有梯形纳米腔的硅纳米线的几何参数，可以实现从可见光到近红外的多波段热致发光的调谐，而不受激发激光波长的影响。高度可调的波段和与硅集成电子学的兼容性使适合下一代光电子器件的硅基光源成为可能。
Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.