Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface
Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface
复制标题
Si（103）表面砷诱导的多面横向纳米棱柱阵列
DOI：
10.1016/j.apsusc.2018.08.255
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发表时间：
2018
影响因子：
6.7
通讯作者：
G. Chen
中科院分区：
文献类型：
--
作者：
X. J. Wang;S. Daniele;J-Z. Wang;Y. Fujikawa;C. L. Huang;T. Sakurai;G. Chen
通过亚单层砷的热沉积和随后的热处理工艺，在Si{1 0 3}错切表面上制备了高度有序的As/Si刻面横向纳米棱镜阵列，阵列的均匀宽度约为10-18 nm。原位扫描隧道显微镜研究表明，As/Si纳米结构紧密排列，沿〈3 0 1〉方向排列，由2×2重构的As终止的{1 1 3}小面约束.通过表面能和化学势比较，研究了As/Si系统纳米结构和表面小面的形成机制.从头计算将几何转变的驱动力归因于表面能的最小化。此外，横向As/Si纳米棱镜与成熟的Si工艺的兼容性为在Si衬底上制备III-V纳米线提供了一种替代策略，在基础研究和各种应用方面都具有广阔的前景。
Highly ordered As/Si faceted lateral nanoprisms array with a uniform width of about 10–18 nm are fabricated on.Si {1 0 3} miscut surface via thermal deposition of sub-monolayer arsenic followed by a subsequent annealing.process. In situ scanning tunneling microscopy (STM) studies prove the compactly arranged As/Si nanoprisms.orienting along 〈3 0 1〉 direction, which are bounded by As terminated {1 1 3} facets with 2×2 reconstruction..The formation mechanism of the nanoprisms and the surface faceting is investigated via surface energy and.chemical potential comparison for the As/Si systems. Ab initio calculations attribute the driving force of the.geometry transition to the minimization of surface energy. Moreover, the compatibility of the lateral As/Si.nanoprisms with the well-established Si technology propose an alternative strategy to fabricate III-V nanowires.on Si substrate, which is promising for both the fundamental research and a variety of applications.