A fast self-convergent flash-memory programming scheme for MV and analog data storage
A fast self-convergent flash-memory programming scheme for MV and analog data storage
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一种用于MV和模拟数据存储的快速自收敛闪存编程方案
DOI：
10.1109/iscas.2001.922391
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
T. Shibata
中科院分区：
文献类型：
--
作者：
T. Yamasaki;A. Suzuki;D. Kobayashi;T. Shibata
提出了一种用于浮栅MOS存储器中MV/模拟数据存储的快速自收敛编程方案。该方案利用通道热电子注入现象的内置反馈机制，实现了快速准确的数据写入，在不需要写/验证周期的情况下，可以在小于10 /spl mu/s的时间内实现4位分辨率的写入。此外，还提出了一种新的双晶体管存储单元，通过在数据写入过程中实时监控来实现更精确的模拟数据写入。
A fast self-convergent programming scheme has been developed for MV/analog data storage in floating-gate MOS memories. In the scheme, the built-in feedback mechanism of the channel hot electron injection phenomenon is used for fast and accurate data writing, As a result, 4-bit-resolution writing can be achieved in less than 10 /spl mu/s without write/verify cycles. In addition, a new dual-transistor memory cell is proposed to enable more accurate analog data writing by real-time monitoring during data writing.