Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance
Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance
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发表时间：
2017-04
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通讯作者：
M. Si;C. Su;Chunsheng Jiang;N. Conrad;Hong Zhou;K. Maize;G. Qiu;C. Wu;A. Shakouri;M. Alam;P. Ye
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作者：
M. Si;C. Su;Chunsheng Jiang;N. Conrad;Hong Zhou;K. Maize;G. Qiu;C. Wu;A. Shakouri;M. Alam;P. Ye
所谓的玻尔兹曼暴政（与电子的玻尔兹曼分布相关）定义了金属氧化物半导体场效应晶体管 (MOSFET) 在室温下 60 mV/dec 的亚阈值斜率 (SS) 的基本热电子极限，这阻止了电源电压和功耗的降低。在 MOSFET 的栅极堆叠中添加铁电负电容器是打破这一热电子极限的有前途的解决方案之一。同时，二维 (2D) 半导体，例如过渡金属二硫属化物 (TMD)，由于其原子薄的层状沟道、低介电常数以及易于集成在无结晶体管拓扑中，可提供最佳的沟道静电控制。在这里，我们结合了这两个优点，首次展示了使用铁电氧化铪锆（HZO）作为栅极电介质叠层一部分的二硫化钼（MoS2）2D陡坡晶体管。这些晶体管在导通状态和截止状态下均表现出非凡的性能，最大漏极电流为 510 {\mu}A/{\mu}m，最小 SS 为 5.6 mV/dec。由于负电容感应负漏极感应势垒降低 (DIBL)，室温下在 MoS2 负电容场效应晶体管 (NC-FET) 上观察到负微分电阻 (NDR)。还观察和研究了高导通电流引起的自热效应。
The so-called Boltzmann Tyranny (associated with the Boltzmann distribution of electrons) defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature, which prohibits the decrease of the supply voltage and the power consumption. Adding a ferroelectric negative capacitor in the gate stack of a MOSFET is one of the promising solutions to break this thermionic limit. Meanwhile, 2-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs), due to its atomically thin layered channel, low dielectric constant, and ease of integration in a junctionless transistor topology, offer the best electrostatic control of the channel. Here, we combine these two advantages and demonstrate for the first time molybdenum disulfide (MoS2) 2D steep slope transistors using ferroelectric hafnium zirconium oxide (HZO) as part of the gate dielectric stack. These transistors exhibit extraordinary performance in both on-states and off-states, with maximum drain current of 510 {\mu}A/{\mu}m, minimum SS of 5.6 mV/dec. Negative differential resistance (NDR) was observed at room temperature on the MoS2 negative capacitance field-effect-transistors (NC-FETs) as the result of negative capacitance induced negative drain-induced-barrier-lowering (DIBL). High on-current induced self-heating effect was also observed and studied.