On-chip non-Hermitian optical parametric amplifiers with a large bandwidth

On-chip non-Hermitian optical parametric amplifiers with a large bandwidth
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DOI:
10.1364/josab.426956
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发表时间:
2021-07
影响因子:
1.9
通讯作者:
Asif Ahmed;Xiang Meng;Q. Zhong;R. El-Ganainy;R. Osgood;J. Dadap
Asif Ahmed;Xiang Meng;Q. Zhong;R. El-Ganainy;R. Osgood;J. Dadap
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Asif Ahmed;Xiang Meng;Q. Zhong;R. El-Ganainy;R. Osgood;J. Dadap

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Recently, our groups have introduced the notion of optical parametric amplification based on non-Hermitian phase matching wherein the incorporation of loss can lead to gain in this nonlinear optical process. Previous simulation results using second-order nonlinear optical coupled-mode theory have demonstrated the potential of this technique as an alternative to the stringent phase-matching condition, which is often difficult to achieve in semiconductor platforms. Here we fortify this notion for the case of third-order nonlinearity by considering parametric amplification in silicon nanowires and illustrate the feasibility of these devices by employing rigorous finite-difference time-domain analysis using realistic materials and geometric parameters. Particularly, we demonstrate that by systematic control of the optical loss of the idler in a four-wave mixing process, we can achieve efficient unidirectional energy conversion from the pump to the signal component even when the typical phase-matching condition is violated. Importantly, our simulations show that a signal gain of ∼9dB for a waveguide length of a few millimeters is possible over a large bandwidth of several hundreds of nanometers (∼600nm). This bandwidth is nearly 2 orders of magnitude larger than what can be achieved in the conventional silicon-photonics-based four-wave mixing process.