Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy
Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy
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分子束外延在 GaAs(111)B 衬底上的表面重构相图和生长
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
L. Schowalter
中科院分区：
文献类型：
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作者：
K. Yang;L. Schowalter
用三维相图描述了反射高能电子衍射(RHEED)观察到的GaAs(111)B表面重构相与生长参数的关系。2×2、过渡性和√19×√19表面重构对应于相图中不同的区域。一个简单的方程被发现是表示分隔这些区域的边界的很好的近似。从RHEED模式研究中，AS覆盖率被评估为2×2重建的AS覆盖率大于0.79，√19×√19重建的AS覆盖率小于0.58.从RHEED模式和生长参数两个方面讨论了表面形貌和晶体质量与生长条件的关系。
A three‐dimensional phase diagram is introduced to describe the dependence of GaAs(111)B surface reconstruction phases as observed by reflection high‐energy electron diffraction (RHEED) on growth parameters. The 2×2, transitional, and √19 ×√19 surface reconstructions correspond to different zones in the phase diagram. A simple equation is found to be good approximation in representing the boundaries that separate these zones. From RHEED pattern studies, As coverages are evaluated to be a larger than 0.79 for the 2×2 reconstruction and smaller than 0.58 for the√19 ×√19 reconstruction. The dependence of surface morphology and crystal quality on growth condition are discussed in terms of RHEED patterns and growth parameters.