14.7 A 300GHz frequency synthesizer with 7.9% locking range in 90nm SiGe BiCMOS
14.7 A 300GHz frequency synthesizer with 7.9% locking range in 90nm SiGe BiCMOS
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14.7%20A%20300GHz%20频率%20合成器%20with%207.9%%20locking%20range%20in%2090nm%20SiGe%20BiCMOS
DOI：
10.1109/isscc.2014.6757426
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
P. Heydari
中科院分区：
文献类型：
--
作者：
Pei;Z. Wang;O. Momeni;P. Heydari
太赫兹/亚毫米波波段在光谱学、成像和高数据速率无线通信方面提供了独特的应用。在相干通信、雷达系统和频率测量中，精确的太赫兹源是必不可少的。近年来，人们提出了一种基于耦合vco谐波源的太赫兹源。然而，开环信号源表现出严重的频率波动，并且容易受到温度/工艺/电源引起的频率漂移的影响。需要精确的振荡频率，宽调谐范围和低接近相位噪声要求闭环拓扑结构。集成推推式压控振荡器的毫米波锁相环已经在硅技术中得到了高达164GHz[2]的验证。[3]提出了一种300GHz锁相环，锁相范围为0.12%，采用III-IV技术。
The THz/sub-mm-Wave band is known to provide unique applications in spectroscopy, imaging and high-data-rate wireless communication. An accurate THz source is essential in coherent communications, radar systems, and frequency metrology. Recently, THz sources based on coupled VCOs with harmonic generation have been proposed [1]. However, open-loop signal sources exhibit severe frequency fluctuation, and are vulnerable to temperature/process/supply-induced frequency drift. The need for precise oscillation frequency with wide tuning range and low close-in phase noise calls for closed-loop topologies. Millimeter-Wave PLLs incorporating push-push VCOs have been demonstrated up to 164GHz [2] in silicon technology. [3] presented a 300GHz PLL with 0.12% locking range in III-IV technology.