The Role of Oxygen and Surface Reactions in the Deposition of Silicon Oxide like Films from HMDSO at Atmospheric Pressure
The Role of Oxygen and Surface Reactions in the Deposition of Silicon Oxide like Films from HMDSO at Atmospheric Pressure
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DOI：
10.1002/ppap.201100146
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发表时间：
2011-05
影响因子：
3.5
通讯作者：
R. Reuter;K. Rugner;D. Ellerweg;T. Arcos;A. Keudell;J. Benedikt
中科院分区：
文献类型：
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作者：
R. Reuter;K. Rugner;D. Ellerweg;T. Arcos;A. Keudell;J. Benedikt
本文研究了在六甲基二硅氧烷（HMDSO）和氧气混合气体中利用大气压微等离子体射流沉积类SiO2薄膜，以及表面反应在薄膜生长中的作用。两种类型的微等离子体射流，一个与平面电极和氦气中操作，另一个与同轴几何操作在氩气中，被用来研究沉积过程。膜的生长速率和膜中的碳含量被测量为平面射流中的O2和HMDSO混合物的函数，并与HMDSO的消耗的质谱测量进行比较。此外，本地化的性质的喷射基板相互作用被用来研究表面反应，通过施加两个射流在旋转基板上。向气体混合物中添加氧气增加HMDSO耗尽和生长速率，并导致无碳膜的沉积。表面反应负责从生长膜中去除碳。此外，当使用氩气操作的同轴射流进行表面处理时，即使不添加氧气，也可以沉积无碳膜。我们假设，离子或激发物种（可吸收）可能是负责观察到的效果。
The deposition of thin SiO2-like films by means of atmospheric pressure microplasma jets with admixture of hexamethyldisiloxane (HMDSO) and oxygen and the role of surface reactions in film growth are investigated. Two types of microplasma jets, one with a planar electrodes and operated in helium gas and the other one with a coaxial geometry operated in argon, are used to study the deposition process. The growth rate of the film and the carbon-content in the film are measured as a function of the O2 and HMDSO admixture in the planar jet and are compared to mass spectrometry measurements of the consumption of HMDSO. Additionally, the localized nature of the jet–substrate interaction is utilized to study surface reactions by applying two jets on a rotating substrate. The addition of oxygen into the gas mixture increases HMDSO depletion and the growth rate and results in the deposition of carbon free films. The surface reaction is responsible for the carbon removal from the growing film. Moreover, carbon free films can be deposited even without addition of oxygen, when coaxial jet operated with argon is used for the surface treatment. We hypothesize that ions or excited species (metastables) could be responsible for the observed effect.