Interplay between topological valley and quantum Hall edge transport.
Interplay between topological valley and quantum Hall edge transport.
复制标题
拓扑谷与量子霍尔边输运之间的相互作用。
DOI:
10.1038/s41467-022-31680-y
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发表时间:
2022-07-20
影响因子:
16.6
通讯作者:
中科院分区:
文献类型:
--
作者:
An established way of realising topologically protected states in a two-dimensional electron gas is by applying a perpendicular magnetic field thus creating quantum Hall edge channels. In electrostatically gapped bilayer graphene intriguingly, even in the absence of a magnetic field, topologically protected electronic states can emerge at naturally occurring stacking domain walls. While individually both types of topologically protected states have been investigated, their intriguing interplay remains poorly understood. Here, we focus on the interplay between topological domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of high-quality suspended bilayer graphene. We find that the two-terminal conductance remains approximately constant for low magnetic fields throughout the distinct quantum Hall states since the conduction channels are traded between domain wall and device edges. For high magnetic fields, however, we observe evidence of transport suppression at the domain wall, which can be attributed to the emergence of spectral minigaps. This indicates that stacking domain walls potentially do not correspond to a topological domain wall in the order parameter. In electrostatically-gapped bilayer graphene, topologically-protected states can emerge at naturally occurring stacking domain walls even in the absence of a magnetic field. Here, the authors describe the interplay between such domain wall states and quantum Hall edge transport within the eight-fold degenerate zeroth Landau level of suspended bilayer graphene.
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DOI:
10.1073/pnas.1309394110
发表时间:
2013-07-09
影响因子:
11.1
作者:
Alden, Jonathan S.;Tsen, Adam W.;McEuen, Paul L.
通讯作者:
McEuen, Paul L.
影响因子:
64.8
作者:
Ju, Long;Shi, Zhiwen;Wang, Feng
通讯作者:
Wang, Feng
影响因子:
3.7
作者:
Freitag, Frank;Weiss, Markus;Schoenenberger, Christian
通讯作者:
Schoenenberger, Christian
影响因子:
8.6
作者:
Kharitonov, Maxim
通讯作者:
Kharitonov, Maxim
影响因子:
56.9
作者:
Li, Jing;Zhang, Rui-Xing;Zhu, Jun
通讯作者:
Zhu, Jun