Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique
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DOI：
10.1109/ted.2010.2048960
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发表时间：
2010-05
影响因子：
3.1
通讯作者：
Maojun Wang;K. J. Chen
中科院分区：
文献类型：
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作者：
Maojun Wang;K. J. Chen
使用不同注入电流水平的漏极电流注入技术研究 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的断态击穿。详细讨论了漏极注入测量期间源极泄漏和栅极泄漏、纯泄漏和碰撞电离以及源极和栅极注入引起的碰撞电离之间的竞争。研究发现，击穿源于低漏极注入水平下的源极/栅极泄漏，但在高漏极注入电流下主要由源极/栅极引起的碰撞电离过程主导。在低栅极泄漏器件中，源引起的碰撞电离通常先于栅极引起的碰撞电离，从而导致过早的三端断态击穿。我们还发现，在传统三端断态击穿 I-V 测量中，栅极偏置值会影响击穿电压，应仔细考虑。
AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using drain-current injection techniques with different injection current levels. Competitions between the source leakage and gate leakage, pure leakage and impact ionization, and source- and gate-injection-induced impact ionization during the drain-injection measurement are discussed in detail. It was found that the breakdown originates from the source/gate leakage at low drain injection levels but is dominated by source/gate-induced impact ionization process at high drain injection currents. The source-induced impact ionization usually precedes the gate-induced impact ionization in low-gate leakage devices, resulting in a premature three-terminal off-state breakdown. We also found that the gate-bias value affects the breakdown voltage in the conventional three-terminal off-state breakdown I-V measurement and should be carefully considered.