BORON, DOMINANT ACCEPTOR IN SEMICONDUCTING DIAMOND
BORON, DOMINANT ACCEPTOR IN SEMICONDUCTING DIAMOND
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DOI：
10.1103/physrevb.7.4560
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发表时间：
1973-01-01
影响因子：
3.7
通讯作者：
CHRENKO, RM
中科院分区：
文献类型：
--
作者：
CHRENKO, RM
对实验室生长的半导体金刚石中受主中心的性质进行了研究。对氮、铝、硼以及铝和硼掺杂晶体的未补偿受体含量的分析表明：（i）无夹杂物晶体的铝含量非常低，（ii）没有足够的铝来说明受体含量，（iii）氮含量非常低，并且对于许多半导体金刚石，仅存在由深埋氮供体进行的小程度的补偿，以及（iv）硼含量和受主含量之间存在良好的相关性。这些结果表明，硼是实验室生长的半导体金刚石中的主要受体，而不是铝，如先前已经假设的一些作者。这些结果，当结合其他数据的电阻率和活化能传导，表明占主导地位的半导体性质的天然和实验室生长的金刚石是由于一个受体，硼，在不同的浓度。以前的论文实验室生长的半导体金刚石的基础上的大铝含量和假设的高氮含量的论点进行了严格的重新审查。
A study has been made to determine the nature of the acceptor center in laboratory-grown semiconducting diamonds. Analyses for nitrogen, aluminum, boron, and uncompensated-acceptor content of aluminum and boron-doped crystals have shown that (i) the aluminum content of inclusion-free crystals is very low,(ii) there is not enough aluminum to account for the acceptor content,(iii) the nitrogen content is very low and only a small degree of compensation by deep-lying nitrogen donors could exist for many semiconducting diamonds, and (iv) there is a good correlation between boron content and acceptor content. These results indicate that boron is the dominant acceptor in laboratory-grown semiconducting diamond, and not aluminum as has been assumed previously by a number of authors. These results, when combined with other data on resistivity and activation energy for conduction, indicate that the dominant semiconducting properties of both natural and laboratory-grown diamond are due to one acceptor, boron, at different concentrations. Previous papers on laboratory-grown semiconducting diamonds which based arguments on the large aluminum content and the assumed high nitrogen content are critically reexamined.