All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5
All-optical dynamic tuning of local excitonic emission of monolayer MoS2 by integration with Ge2Sb2Te5
复制标题
通过与 Ge2Sb2Te5 集成对单层 MoS2 局域激子发射进行全光动态调谐
DOI:
10.1515/nanoph-2019-0366
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发表时间:
2020-04
期刊:
影响因子:
7.5
通讯作者:
Tian Jiang
中科院分区:
文献类型:
--
作者:
Hao Ouyang;Haitao Chen;Yuxiang Tang;Jun Zhang;Chenxi Zhang;Bin Zhang;Xiang'ai Cheng;Tian Jiang
Abstract Strong quantum confinement and coulomb interactions induce tightly bound quasiparticles such as excitons and trions in an atomically thin layer of transitional metal dichalcogenides (TMDs), which play a dominant role in determining their intriguing optoelectronic properties. Thus, controlling the excitonic properties is essential for the applications of TMD-based devices. Here, we demonstrate the all-optical tuning of the local excitonic emission from a monolayer MoS2 hybridized with phase-change material Ge2Sb2Te5 (GST) thin film. By applying pulsed laser with different power on the MoS2/GST heterostructure, the peak energies of the excitonic emission of MoS2 can be tuned up to 40 meV, and the exciton/trion intensity ratio can be tuned by at least one order of magnitude. Raman spectra and transient pump-probe measurements show that the tunability originated from the laser-induced phase change of the GST thin film with charge transferring from GST to the monolayer MoS2. The dynamic tuning of the excitonic emission was all done with localized laser pulses and could be scaled readily, which pave a new way of controlling the excitonic emission in TMDs. Our findings could be potentially used as all-optical modulators or switches in future optical networks.
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