Supplemental Information for Nanoscale Control of an Interfacial Metal-Insulator Transition at Room Temperature
Supplemental Information for Nanoscale Control of an Interfacial Metal-Insulator Transition at Room Temperature
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发表时间：
2008
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通讯作者：
C. Cen;S. Thiel;G. Hammerl;C. Schneider;K. Andersen;C. Hellberg;J. Mannhart;J. Levy
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作者：
C. Cen;S. Thiel;G. Hammerl;C. Schneider;K. Andersen;C. Hellberg;J. Mannhart;J. Levy
对照实验分别在4个uc LaAlO3/SrTiO3、2个uc LaAlO3/SrTiO3和0个uc LaAlO3/SrTiO3（即裸SrTiO3）样品上进行。这些样品中的每一个都以与3 uc LaAlO3/SrTiO3相同的方式生长和接触，除了裸露的SrTiO3，其中LaAlO3没有生长。表1中包含了我们对所有四个样品（包括3 uc LaAlO3/SrTiO3）的研究结果的总结。
Control experiments were performed on 4 uc LaAlO3/SrTiO3 and 2 uc LaAlO3/SrTiO3, and 0 uc LaAlO3/SrTiO3 (i.e., bare SrTiO3) samples. Each of these samples was grown and contacted in a manner identical to that described for the 3 uc LaAlO3/SrTiO3 with the exception of the bare SrTiO3, on which LaAlO3 was not grown. A summary of our findings for all four samples (including 3 uc LaAlO3/SrTiO3) is contained in Table 1.