Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1−xN layers
Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1−xN layers
复制标题
厚 InxGa1−xN 层中红移发光与表面缺陷的微观相关性
DOI：
10.1063/1.1479199
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发表时间：
2002
影响因子：
4
通讯作者：
J. Christen
中科院分区：
文献类型：
--
作者：
F. Bertram;S. Srinivasan;L. Geng;F. Ponce;T. Riemann;J. Christen
利用高空间分辨阴极发光技术，在微观尺度上实现了InxGa1−xN厚层的结构和发光性质之间的直接关联。通过金属有机气相外延生长厚的InxGa1−xN层，对于x⩾0.1.1，通常观察到表面粗化。尽管薄膜仍然是高度平面化的，但表面出现了陨石坑和突起。这些表面缺陷与指示铟偏析的红移发光有关，并与薄膜中的线位错有关。
A direct correlation between the structural and luminescence properties of thick InxGa1−xN layers has been achieved on a microscopic scale using highly spatially resolved cathodoluminescence. Surface roughening is typically observed in growth by metalorganic vapor phase epitaxy of thick InxGa1−xN layers for x⩾0.1. Although the film remains highly planar, craters and protrusions appear on the surface. These surface defects are associated with redshifted luminescence indicative of indium segregation, and are related to threading dislocations in the films.