Bumpless interconnect of 6-μm-pitch Cu electrodes at room, temperature
Bumpless interconnect of 6-μm-pitch Cu electrodes at room, temperature
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DOI：
10.1109/tadvp.2008.920644
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发表时间：
2008-08-01
影响因子：
--
通讯作者：
Suga, Tadatorno
中科院分区：
文献类型：
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作者：
Shigetou, Akitsu;Itoh, Toshihiro;Suga, Tadatorno
采用表面活化键合（SAB）方法，在室温下实现了6 μ m间距铜电极的无凹凸互连。在这项研究中，我们提出了一种新的无凹凸结构，其中电极和周围的铜框架具有相同的高度，以增加结合强度，并证明了铜表面之间密封互连的可行性。在反应离子束腐蚀（RIE）辅助下，采用damascene工艺制备Cu结构。将放置在框架内的923 521个电极排列成螺旋链，通过电阻测量来检测互连不足的位置。使用简单化学机械抛光(CMP)-Cu膜样品优化的SAB条件，我们发现744 769个电极成功互连，除了框架附近的一些特定线，这可能是由于样品制备错误而不是键缺陷。平均接触电阻小于0.08 ω；在环境空气中，在150摄氏度下进行1000小时的高温储存测试，接触电阻几乎没有增加，因此在框架结构上实现了密封效果。
Bumpless interconnect of 6-mu m-pitch Cu electrodes was realized at room temperature with the surface activated bonding (SAB) method. In this study, we propose a novel bumpless structure, where the electrodes and a surrounding Cu frame are fabricated with the same height to increase bond strength and demonstrate the feasibility of a sealing interconnection between Cu surfaces. The damascene process, assisted by the reactive ion beam etching (RIE), was used to fabricate the Cu structures. 923 521 electrodes placed inside the frame were arranged into a spiral chain to enable the detection of the positions with insufficient interconnection by electrical resistance measurements. Using the SAB conditions optimized with simple chemo-mechanical polishing (CMP)-Cu film samples, we found that 744 769 electrodes were successfully interconnected, except some specific lines near the frame, which might be due to sample preparation error rather than a bond defect. The mean contact resistance was below 0.08 Omega; a sealing effect was achieved at the frame structure because there was little increase in the contact resistance in high temperature storage testing performed at 150 degrees C for 1000 h, in ambient air.