Accuracy of approximations in MOSFET charge models
Accuracy of approximations in MOSFET charge models
复制标题
DOI：
10.1109/16.974752
复制
发表时间：
2002-08
影响因子：
3.1
通讯作者：
C. McAndrew;J. Victory
中科院分区：
文献类型：
--
作者：
C. McAndrew;J. Victory
This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem.
