Development of a 64 Gbps Si Photonic Crystal Modulator
Development of a 64 Gbps Si Photonic Crystal Modulator
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DOI:
10.1587/transele.2019ocp0004
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发表时间:
2020-11
期刊:
影响因子:
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通讯作者:
Y. Hinakura;H. Arai;T. Baba
中科院分区:
文献类型:
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作者:
Y. Hinakura;H. Arai;T. Baba
A compact silicon photonic crystal waveguide (PCW) slow-light modulator is presented. The proposed modulator is capable of achieving a 64 Gbps bit-rate in a wide operating spectrum. The slow-light enhances the modulation efficiency in proportion to its group index ng. Two types of 200-μm-long PCW modulators are presented. These are lowand high-dispersion devices, which are implemented using a complementary metal-oxide-insulator process. The lattice-shifted PCW achieved lowdispersion slow-light and exhibited ng ≈ 20 with an operating spectrum Δλ ≈ 20 nm, in which the fluctuation of the extinction ratio is ±0.5 dB. The PCW device without the lattice shift exhibited high-dispersion, for which a large or small value of ng can be set on demand by changing the wavelength. It was found that for a large ng, the frequency response was degraded due to the electro-optic phase mismatch between the RF signals and slow-light even for such small-size modulators. Meander-line electrodes, which bypass and delay the RF signals to compensate for the phase mismatch, are proposed. A high cutoff frequency of 55 GHz was theoretically predicted, whereas the experimentally measured value was 38 GHz. A high-quality open eye pattern for a drive voltage of 1 V at 32 Gbps was observed. The clear eye pattern was maintained for 50–64 Gbps, although the drive voltage increased to 3.5–5.3 V. A preliminary operation of a 2-bits pulse amplitude modulation up to 100 Gbps was also attempted. key words: photonic crystal, optical modulator, silicon photonics