Preparation of Metallic Single-Wall Carbon Nanotubes by Selective Etching
Preparation of Metallic Single-Wall Carbon Nanotubes by Selective Etching
复制标题
选择性刻蚀制备金属单壁碳纳米管
DOI：
10.1021/nn502120k
复制
发表时间：
2014-07-01
期刊：
影响因子：
17.1
通讯作者：
Cheng, Hui-Ming
中科院分区：
文献类型：
--
作者：
Hou, Peng-Xiang;Li, Wen-Shan;Cheng, Hui-Ming
报道了以甲烷为碳源，采用改进的浮动催化剂化学气相沉积法制备了高浓度金属单壁碳纳米管(m-SWGITs)样品。通过调节载气种类和流量、催化剂浓度、生长温度等实验参数，制备了小直径半导体碳纳米管(S-SWCNTs)和大直径m-SWCNT。在相同的生长条件下，在1000℃的温度下，发现添加氢作为腐蚀剂气体导致了较小直径的S碳纳米管的优先去除。结果得到了富含大直径金属单壁碳纳米管的样品。自组装的鱼网状m-SWCNT网络具有良好的光学透明性和导电性。
We report the bulk synthesis of a sample with a high concentration of metallic single-wall carbon nanotubes (m-SWGITs) using a modified floating catalyst chemical vapor deposition method with methane as the carbon precursor. By tuning experimental parameters, such as species and flux of carrier gases, catalyst concentration, growth temperature, etc., small-diameter semiconducting SWCNTs (s-SWCNTs) and large-diameter m-SWCNTs were obtained. Using identical growth conditions, at a temperature of 1000 degrees C, it was found that the addition of hydrogen as an etchant gas resulted in the preferential removal of the smaller diameter s-SWCNTs. As a result, a sample enriched with large-diameter metallic SWCNTs was obtained. The self-assembled fishnet-like m-SWCNT network showed excellent optical transparency and electrical conductivity.