Quantitative analysis of oxide films on ODS-alloys using MCs+-SIMS and e-beam SNMS
Quantitative analysis of oxide films on ODS-alloys using MCs+-SIMS and e-beam SNMS
复制标题
使用 MC-SIMS 和电子束 SNMS 对 ODS 合金上的氧化膜进行定量分析
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
W. Speier
中科院分区：
文献类型：
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作者：
J. Pfeifer;H. Holzbrecher;W. Quadakkers;U. Breuer;W. Speier
总结尝试获得定量分析的氧化膜的深度分布的铁基ODS合金使用MCs+-西姆斯和电子束SNMS。由于合金的氧化膜主要由氧化铝组成，因此使用Al 2 O3（蓝宝石）中的注入标准品来量化测量的深度分布。通常存在于西姆斯分析中的所谓基质效应通过记录MCs+-二次离子而大大减少。在宽浓度范围内，西姆斯和SNMS数据之间的一致性在2-3倍之内。的主要合金元素与18 O示踪剂实验相结合的评价浓度分布已被用来给铁基ODS合金的氧化膜的生长过程的解释，有和没有添加的氧化钇分散体。结果表明，氧化钇分散体的加入是负责在氧化物生长机制中观察到的显着变化。
SummaryAttempts to obtain a quantitative analysis of depth profiles of oxide films on iron-based ODS-alloys using MCs+-SIMS and e-beam SNMS are presented. Since the oxide films of the alloys consist mainly of alumina, implantation standards in Al2O3(sapphire) were used for the quantification of the measured depth profiles. The so-called matrix effect, normally present in SIMS analysis, is strongly reduced by recording the MCs+-secondary ions. Over a wide concentration range, agreement between SIMS and SNMS data is obtained within a factor 2–3. The evaluated concentration profiles for the main alloying elements in combination with 18O tracer-experiments have been used to give an interpretation of the growth processes of the oxide films for Fe-based ODS-alloys, with and without the addition of an yttria dispersion. The results show that the addition of yttria dispersion is responsible for the dramatic change observed in the oxide growth mechanism.