Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si
Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25-100 nm) thin films on LaNiO3 buffered Si
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DOI：
10.1063/1.1383262
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发表时间：
2001-07
影响因子：
3.2
通讯作者：
Chunjiang Lin;P. Friddle;C. H. Ma;A. Daga;Haydn Chen
中科院分区：
文献类型：
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作者：
Chunjiang Lin;P. Friddle;C. H. Ma;A. Daga;Haydn Chen
采用金属有机化学气相沉积方法，在LaNiO3 （LNO）缓冲镀铂Si表面制备了厚度为25 ~ 100 nm的（100）优选取向Pb(Zr, Ti)O3 （PZT）薄膜。利用极化电场（P-E）、温度变电流-电压（I-V）和电容-电压（C-V）测量等技术研究了PZT薄膜的电学性质与厚度的关系。由于在铁电/电极界面上形成肖特基势垒，存在内置电场。观察到载流子浓度和界面内置电场随PZT膜厚度的减小而逐渐增加，这被认为是控制测量的介电/铁电性能的主要因素。在较薄的PZT薄膜中，较高的内嵌电场会将偶极子钉在界面区域，从而延缓偶极子对外部电场的响应。
Pb(Zr, Ti)O3 (PZT) thin films with (100) preferred orientation were prepared using metalorganic chemical vapor deposition on LaNiO3 (LNO) buffered platinized Si with thickness varying from 25–100 nm. The dependence of electrical properties of PZT films on thickness was studied using several techniques, including polarization–electric field (P–E), temperature variable current–voltage (I–V), and capacitance–voltage (C–V) measurements. Because of the formation of Schottky barriers at ferroelectric/electrode interfaces, built-in electric fields are present. A progressive increment in carrier concentration and interfacial built-in electric field versus reducing PZT film thickness was observed, which is believed to be a dominant factor controlling the measured dielectric/ferroelectric properties. The higher built-in electric field in thinner PZT films would pin the dipoles at the interfacial region and retard the response of dipoles to the external electric field.