Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines
Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines
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DOI：
10.1109/led.2020.3007062
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发表时间：
2020-07
影响因子：
4.9
通讯作者：
Hakhamanesh Mansoorzare;R. Abdolvand
中科院分区：
文献类型：
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作者：
Hakhamanesh Mansoorzare;R. Abdolvand
首次在硅基硼酸锂悬浮波导中实现了具有声致非互易性的兰姆波延迟线。电流在与压电转换的声波相同的轴上被馈送通过硅层，所述压电转换的声波根据与漂移电子的能量交换的方向而被衰减或放大（即，声电（AE）效应）。因此，延迟线的插入损耗（IL）和非互易性是可通过控制改变电子漂移速度和随后的动量转移的电流偏置来调节的。在600 MHz至700 MHz范围内的概念验证延迟线被证明具有高达2.8%的分数带宽和高达5.6 dB的AE增益，导致约20 dB的非互易性。这些非互易组件可以提供单片和动态可调的解决方案，所产生的电信频谱中的拥塞和干扰的增加，并建议通过设计/制造优化开发完全可切换的低IL延迟线的可能性的众多问题。
Lamb wave delay lines with acoustoelectri-cally-induced non-reciprocity are demonstrated in suspended lithium niobate-on-silicon waveguides for the first time. An electric current is fed through the silicon layer in the same axis as the piezoelectrically-transduced acoustic waves which are attenuated or amplified depending on the direction of the energy exchange with drifting electrons (i.e. acoustoelectric (AE) effect). Therefore, the insertion loss (IL) and non-reciprocity of the delay line is adjustable by controlling the current bias which varies the electron drift velocity and the subsequent momentum transfer. Proof-of-concept delay lines in the range of 600 MHz to 700 MHz are demonstrated with a fractional bandwidth as high as 2.8% and AE gain as high as 5.6 dB resulting in ~20 dB of non-reciprocity. These non-reciprocal components could offer a monolithic and dynamically-tunable solution to the numerous issues that arise from the increasing congestion and interferences in the telecommunication spectrum and suggests the possibility of developing fully-switchable low-IL delay lines through design/fabrication optimizations.