Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method
Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method
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DOI：
10.1016/j.jcrysgro.2022.126676
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发表时间：
2022-05-02
影响因子：
1.8
通讯作者：
Tsuchida, Hidekazu
中科院分区：
文献类型：
--
作者：
Kamata, Isaho;Hoshino, Norihiro;Tsuchida, Hidekazu
研究了高温气源法生长的4 H-SiC晶体中螺旋位错（TSD）和混合位错（TMD）的传播规律。制备沿生长方向切割的横截面样品，并进行具有衍射矢量g = 000（sic）4的X射线透射形貌术以揭示位错线。形貌图像显示，在生长方向上延伸的一些对TSD/TMD彼此接近，并在生长的晶体的中间合并。通过同步辐射X射线截面形貌的直接观察证实，一对TSD和TMD与相反的C-分量Burgers矢量合并，并且位错的C-分量在晶体生长期间被湮灭。然而，一些TSD/TMD对没有表现出聚结，尽管它们可以在拓扑上被湮灭。并对TSD/TMD聚结成败的机理进行了探讨。
Propagation of threading screw dislocations (TSDs) and mixed dislocations (TMDs) in 4H-SiC crystals grown by the high-temperature gas source method were investigated. Cross-sectional samples cut in the growth direction were prepared and X-ray transmission topography with a diffraction vector g = 000(sic)4 was performed to reveal the dislocation lines. The topography image revealed that some pairs of TSDs/TMDs extending in the growth direction approached each other and merged in the middle of the grown crystal. Direct observations by synchrotron X-ray section topography confirmed that a pair of TSD and TMD with opposing c-component Burgers vectors had merged and the c-components of the dislocations were annihilated during crystal growth. Some pairs of TSDs/TMDs, however, showed no coalescence, although they could be annihilated topologically. The mechanism behind the success and failure of TSD/TMD coalescence was also discussed.