Phase-field formulation for quantitative modeling of alloy solidification
Phase-field formulation for quantitative modeling of alloy solidification
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DOI：
10.1103/physrevlett.87.115701
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发表时间：
2001-09-10
影响因子：
8.6
通讯作者：
Karma, A
中科院分区：
文献类型：
--
作者：
Karma, A
引入相场法定量模拟合金中微观结构图形的形成。薄界面的限制，这个配方产生一个严格得多的限制界面厚度的选择比以前的配方，并允许消除非平衡效应的接口。固体扩散系数为零的枝晶生长模拟表明，这种方法可以准确地模拟界面演化和固体中的溶质分布。
A phase-field formulation is introduced to simulate quantitatively microstructural pattern formation in alloys. The thin-interface limit of this formulation yields a much less stringent restriction on the choice of interface thickness than previous formulations and permits one to eliminate nonequilibrium effects at the interface. Dendrite growth simulations with vanishing solid diffusivity show that both the interface evolution and the solute profile in the solid are accurately modeled by this approach.