Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
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硅量子点库仑封锁峰间距统计
DOI：
10.1103/physrevb.59.r10441
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发表时间：
1999
影响因子：
3.7
通讯作者：
J. Kotthaus
中科院分区：
文献类型：
--
作者：
Friedrich C. Simmel;D. Abusch;D. Wharam;Marc A. Kastner;J. Kotthaus
我们提出了量子点库仑阻塞峰位置波动的实验研究。该点是通过使用堆叠栅极对硅金属氧化物半导体场效应晶体管结构的二维电子气进行图案化来定义的。这允许改变量子点上的电子数量，而不会产生明显的形状扭曲。充电能量与单粒子能量的比率比同类 GaAs/AlxGa12xAs 量子点大得多。库仑封锁状态下电导峰间距的统计分布被发现是单峰的，并且不遵循维格纳推测。间距的波动比典型的单粒子能级间距大得多，因此明显违背了恒定相互作用随机矩阵理论的期望。 @S0163-1829~99!50916-8#
We present an experimental study of the fluctuations of Coulomb-blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon metal-oxide-semiconductor field-effect transistor structure using stacked gates. This permits variation of the number of electrons on the quantum dot without significant shape distortion. The ratio of charging energy to single-particle energy is considerably larger than in comparable GaAs/AlxGa12xAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb-blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single-particle level spacing and thus clearly contradict the expectation of constant interaction‐random matrix theory. @S0163-1829~99!50916-8#