Fabrication of Flat MgO(111) Films on Al2O3(0001) Substrates by Pulsed Laser Deposition
Fabrication of Flat MgO(111) Films on Al2O3(0001) Substrates by Pulsed Laser Deposition
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脉冲激光沉积在 Al2O3(0001) 基底上制备平坦 MgO(111) 薄膜
DOI：
10.1143/apex.2.091403
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发表时间：
2009
影响因子：
2.3
通讯作者：
H. Hosono
中科院分区：
文献类型：
--
作者：
T. Susaki;S. Kumada;T. Katase;K. Matsuzaki;M. Miyakawa;H. Hosono
我们发现，脉冲激光沉积（PLD）在α-Al2O3（0001）衬底（衬底温度400-800°C，氧分压10-4-100 Pa）下可以在α-Al2O3（0001）衬底上生长外延MgO（111）薄膜，尽管MgO（111）具有强烈的静电势发散性。所得薄膜表面呈现阶梯状结构，反映α-Al2O3（0001）表面，即使在薄膜厚度为80 nm时，其均方根粗糙度也很小，仅为0.62 nm。这些结果表明，利用传统PLD技术生产的平面MgO（111）薄膜制造各种人工氧化物结构是可能的。
We have found that epitaxial MgO(111) thin films grow under a wide range of deposition conditions (substrate temperatures of 400–800 °C, oxygen partial pressures of 10-4–100 Pa) on α-Al2O3(0001) substrates by pulsed laser deposition (PLD), despite the strongly divergent electrostatic potential of MgO(111). The surfaces of the resulting thin films show step-and-terrace structures reflecting the surface of α-Al2O3(0001) with a small root-mean-square roughness of 0.62 nm even at a film thickness of 80 nm. These results present the possibility of fabricating various artificial oxide structures using flat MgO(111) films produced by a conventional PLD technique.
影响因子：
64.8
作者：
Ohtomo, A;Hwang, HY
通讯作者：
Hwang, HY