The resistivity and structure of chromium thin films
The resistivity and structure of chromium thin films
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铬薄膜的电阻率和结构
DOI：
10.1088/0508-3443/16/10/309
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发表时间：
1965
期刊：
影响因子：
--
通讯作者：
P. Gould
中科院分区：
文献类型：
--
作者：
P. Gould
研究了真空沉积铬膜的电阻特性，并将其与膜的结构联系起来。在300°C和20°C的温度下，在10-9 ° C的压力下沉积在衬底上的膜分别具有大约1.5倍和4倍体值的折射率。在10 ~（-5）Pa的压力下沉积的薄膜的相应值是体值的2倍和大于6倍。用电子显微镜研究薄膜结构，测量薄膜密度、薄膜杂质和薄膜沉积过程中真空室残留气体，表明薄膜由相对纯的铬晶粒组成，在其边界处有杂质，并得出结论，晶粒尺寸和杂质含量-两者都取决于沉积条件-是决定薄膜电阻特性的重要因素。
The resistive properties of vacuum-deposited chromium films have been studied and related to their structure. Films deposited at a pressure of 10-9 torr on substrates at temperatures of 300°C and 20°C have resistivities of approximately 1.5 times and 4 times bulk value respectively. The corresponding values for films deposited at a pressure of 10-5 torr are 2 times and greater than 6 times bulk value. Investigation of film structure by electron microscopy, and measurement of film density, film impurities and vacuum-chamber residual gases during film deposition, show that the films consist of grains of relatively pure chromium with impurities at their boundaries and it is concluded that the grain size and impurity content - both of which depend upon deposition conditions - are the important factors that determine the resistive properties of the films.