Efficient Optical Quantification of Heterogeneous Emitter Ensembles
Efficient Optical Quantification of Heterogeneous Emitter Ensembles
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DOI：
10.1021/acsphotonics.9b01707
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发表时间：
2020-01-01
期刊：
影响因子：
7
通讯作者：
Bassett, Lee C.
中科院分区：
文献类型：
--
作者：
Breitweiser, S. Alex;Exarhos, Annemarie L.;Bassett, Lee C.
固体材料中基于缺陷的量子发射体为量子通信和传感提供了一个很有前途的平台。共聚焦荧光显微镜技术已经揭示了许多宿主材料中的量子发射器。快速而准确地测量发射器集合的能力对于描述这些新的量子发射器系统是重要的。然而，在一些材料中，不同发射器的光学特性差别很大，甚至在同一样品中也是如此。在这些情况下，传统的整体荧光测量受到异质性的干扰，而逐个缺陷的研究是不切实际的。在这里，我们描述了一种利用大面积光致发光图谱来定量和系统地分析非均相发射体系综的性质的方法。我们用这种方法研究了样品处理对六方氮化硼发射体的影响，我们发现低能(3keV)的电子辐照产生了发射体，而在惰性气体环境中的高温(850℃)热处理则使发射体变亮。
Defect-based quantum emitters in solid-state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. The ability to quickly and accurately survey emitter ensembles is important for characterizing these new quantum emitter systems. In some materials, however, optical properties vary widely among emitters, even within the same sample. In these cases, traditional ensemble fluorescence measurements are confounded by heterogeneity, whereas individual defect-by-defect studies are impractical. Here we describe a method to quantitatively and systematically analyze the properties of heterogeneous emitter ensembles using large-area photoluminescence maps. We apply this method to study the effects of sample treatments on emitters in hexagonal boron nitride, and we find that low-energy (3 keV) electron irradiation creates emitters, whereas high-temperature (850 degrees C) annealing in an inert gas environment brightens emitters.