Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon
Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon
复制标题
重磷注入多晶硅的晶粒长大机制
DOI：
10.1149/1.2131703
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发表时间：
1978
影响因子：
3.9
通讯作者：
S. Nishimatsu
中科院分区：
文献类型：
--
作者：
Y. Wada;S. Nishimatsu
用透射电镜研究了高温退火对重注磷多晶硅薄膜晶粒生长的影响。发现超过4· 1020 cm-1的磷掺杂促进晶粒生长。这种生长被分解为一次再结晶和二次再结晶。等时退火揭示了这些作为2.4和1.0 eV的激活能，分别。一次再结晶的驱动力是界面能。因此，在初级再结晶之后的基本过程归因于硅在晶界区域的扩散。多晶硅（polySi）通常用作MOS LSI的栅极材料（1）。特别地，精细图案光刻技术的最新进展使得控制图案清晰度以及降低材料的电阻率是必不可少的。
Grain growth phenomena of heavily phosphorus-implanted polycrystalline silicon films owing to high temperature annealing are investigated by transmission electron microscope. Phosphorus doping in excess of 4• 1020 cm-~ is found to enhance grain growth. This growth is broken down into primary and secondary recrystallization. Isochronal annealing reveals the activation energies for these as 2.4 and 1.0 eV, respectively. The driving force of the primary recrystallization is found to be the interface energy. Therefore, the elementary process behind the primary, recrystallization is attributed to silicon diffusion across the grain boundary region.Polycrystalline silicon (poly Si) is commonly used as gate materials of MOS LSI's (1). In particular, recent progress in fine pattern lithographic technology has made it indispensable to control the pattern definition as well as to lower the resistivity of the material.