Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect
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DOI：
10.1103/physrevlett.99.216802
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发表时间：
2007-11-23
影响因子：
8.6
通讯作者：
Castro Neto, A. H.
中科院分区：
文献类型：
--
作者：
Castro, Eduardo V.;Novoselov, K. S.;Castro Neto, A. H.
我们证明了石墨烯双分子层的电子间隙可以通过施加栅极偏压从外部控制。根据磁输运数据（回旋加速器质量的舒布尼科夫-德哈斯测量值），并使用紧密结合模型，我们提取了作为电子密度函数的间隙值。我们发现，在SiO2的电击穿下，使用小于或接近1 V/nm的电场，可以将间隙从零能量改变为中红外能量。在量子霍尔态中可以清楚地看到缺口的打开。
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less than or similar to 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.