Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field.
Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field.
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DOI：
10.1103/physrevlett.109.206601
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发表时间：
2012-11
影响因子：
8.6
通讯作者：
V. Dugaev;M. Inglot;E. Sherman;J. Berakdar;J. Barnaś
中科院分区：
文献类型：
--
作者：
V. Dugaev;M. Inglot;E. Sherman;J. Berakdar;J. Barnaś
我们预测了两个自旋相关的二维电子系统中的输运现象，这是由空间起伏的Rashba自旋轨道相互作用引起的。当电子气被磁化时，随机Rashba相互作用导致反常霍尔效应。这种系统的一个例子是基于窄隙磁致伸缩器的对称量子阱。我们发现，反常的霍尔电导率揭示了一个强烈的非线性依赖于磁化强度，在大自旋密度呈指数下降。我们还表明，电子散射从一个波动的Rashba场在一个二维的电子系统导致的负磁阻产生完全是由于自旋相关的影响。
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by a spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects.