High Efficiency 293 GHz Radiating Source in 65 nm CMOS
High Efficiency 293 GHz Radiating Source in 65 nm CMOS
复制标题
采用 65 nm CMOS 的高效 293 GHz 辐射源
DOI：
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发表时间：
2014
影响因子：
3
通讯作者：
E. Socher
中科院分区：
文献类型：
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作者：
S. Jameson;E. Socher
这封信提出了一个J波段辐射源（284-301 GHz）的基础上，差分考毕兹振荡器与片上天线在65 nm CMOS。该源辐射振荡频率的三次谐波，由于其大电压信号，该三次谐波也在压控振荡器（VCO）本身中产生。集成的环形天线还充当VCO晶体管漏极的负载电感，在基波和三次谐波匹配天线处充当扼流圈。天线在整个调谐范围内具有高于+9 dBi的方向性。该频率源的DC到RF辐射功率效率为2.8%，辐射功率为-2.7 dBm，EIRP为+6.4 dBm，硅面积仅为0.26 mm 2。
This letter presents a J-band radiating source (284-301 GHz) based on a differential Colpitts oscillator with an on-chip antenna in 65 nm CMOS. The source radiates the third harmonic of the oscillation frequency, which is also generated in the voltage controlled oscillator (VCO) itself due to its large voltage signal. An integrated loop antenna serves also as the load inductance at the drains of the VCO transistors, acting as a choke at the fundamental and matched antenna at the third harmonic. The antenna has a directivity above +9 dBi across the tuning range. This frequency source has a DC-to-RF radiated power efficiency of 2.8%, a radiated power of -2.7 dBm and an EIRP of +6.4 dBm, taking a silicon area of only 0.26 mm2.