The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
The effect of indium concentration on the optical properties of a -plane InGaN/GaN quantum wells grown on r -plane sapphire substrates
复制标题
铟浓度对r面蓝宝石衬底上生长的a面InGaN/GaN量子阱光学性能的影响
DOI：
10.1002/pssa.201001007
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Badcock T
中科院分区：
文献类型：
--
作者：
Badcock T
我们报道了一系列具有恒定阱宽和不同铟浓度的非极面InGaN/GaN多量子阱（QW）结构的光学性质。发射光谱主要是由复合在区域的量子阱的基面堆垛层错。该发射的峰值能量红移并且发射线宽随着QW中的平均铟含量和铟合金化基面堆垛层错的增加而显著增加。此外，发光衰减时间的光谱灵敏度随着样品中铟含量的增加而减弱。这些效应归因于组成的增加，因此更高的铟含量的样品的电子无序导致更强的载流子局域化，这抑制了局域态带内的弛豫。
We report on the optical properties of a series of non‐polara‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking faults. The peak energy of this emission red‐shifts and the emission line width increases significantly with increasing average indium content in the QWs and indium–alloyed basal‐plane stacking faults. Furthermore, the spectral sensitivity of the luminescence decay time weakens as the indium content of the sample increases. These effects are attributed to the increase in compositional and hence electronic disorder of higher indium content samples resulting in stronger carrier localisation, which suppresses relaxation within the band of localised states.