Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method
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DOI：
10.1016/s0167-577x(00)00249-4
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发表时间：
2001-02-01
影响因子：
3
通讯作者：
Kang, TW
中科院分区：
文献类型：
--
作者：
Kim, HM;Oh, JE;Kang, TW
在这项研究中，30 × 30毫米（2）的独立GaN衬底制造的400-450微米厚的GaN薄膜生长在（0001）蓝宝石氢化物气相外延（HVPE）。通过机械抛光剥离法将厚膜从衬底上分离。使用金刚石浆料，在剥离之后，在所得的自支撑GaN晶片中仅轻微或不存在弯曲。(C)2001 Elsevier Science B. V.保留所有权利。
In this study, 30 x 30 mm(2) free-standing GaN substrates were fabricated from 400-450 mum thick GaN films grown on (0001) sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the substrate by mechanical polishing liftoff method. using a diamond slurry, After liftoff, the bow is only slight or absent in the resulting free-standing GaN wafers. (C) 2001 Elsevier Science B.V. All rights reserved.