The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes
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光照强度和外加偏压对金/聚乙烯醇（Co、Zn掺杂）/n-Si肖特基势垒二极管介电性能的影响
DOI：
10.1002/app.33131
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
T. Mammadov
中科院分区：
文献类型：
--
作者：
Habibe Uslu;Ş. Altındal;T. Tunç;I. Uslu;T. Mammadov
研究了Au/PVA(Co，Zn掺杂)/n-Si肖特基势垒二极管(SBD)在不同光照强度下的发光特性。利用1 MHz和室温下的电容-电压(C-V)和电导-电压(G/ω-V)特性研究了光照对介电性能的影响。介电常数(e‘)、介电损耗(e“)、损耗正切(tanδ)、电模(M’和M”)以及交流电导率(σAC)都强烈地依赖于光照强度和外加偏置电压，特别是在耗尽区和累积区。这些参数的偏置和光照依赖关系可以用Maxwell-Wagner界面极化和界面态电荷的重构和重新排序来解释。此外，e‘-V曲线在SBD2.8V处也表现出相交的特征，与理想∼的常规行为相比，e’-V曲线的这种行为是反常的。结果表明，光照强度提高了Au/PVA(Co，Zn掺杂)/n-Si SBD的导电性。2010Wiley期刊，Inc.《应用理工学》，2011
The Au/polyvinyl alcohol (PVA) (Co, Zn-doped)/n-Si Schottky barrier diodes (SBDs) were exposed to various illumination intensities. Illumination effect on the dielectric properties has been investigated by using capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics at 1 MHz and room temperature. The values of dielectric constant (e′), dielectric loss (e″), loss tangent (tanδ), electric modulus (M′ and M″), and AC electrical conductivity (σAC) were found strongly intensity dependent on both the illumination levels and applied bias voltage especially in depletion and accumulation regions. Such bias and illumination dependency of these parameters can be explained on the basis of Maxwell–Wagner interfacial polarization and restructuring and reordering of charges at interface states. In addition, the e′–V plots also show an intersection feature at ∼ 2.8 V and such behavior of the e′–V plots appears as an abnormality compared with the conventional behavior of an ideal SBD. The obtained results revealed that illumination intensity enhances the conductivity of Au/PVA(Co, Zn-doped)/n-Si SBD. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2011