Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy
Local density of states mapping of a field-induced quantum dot by near-field photoluminescence microscopy
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DOI：
10.1063/1.1984095
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发表时间：
2005-07
影响因子：
4
通讯作者：
K. Matsuda;T. Saiki;S. Nomura;Y. Aoyagi
中科院分区：
文献类型：
--
作者：
K. Matsuda;T. Saiki;S. Nomura;Y. Aoyagi
我们描述了基于具有表面方形网栅的 Be-δ 掺杂 GaAs-Al1−xGaxAs 单异质结的场致量子点结构的近场光致发光显微镜。通过测量近场光致发光强度的空间分布来绘制场致量子点中的局域态密度，因为由于Be受体上的空穴与电子气中的电子复合而产生的光致发光光谱包含电子态密度的信息。通过实验，我们观察到限制在较低能态的电子在空间上集中在场致量子点中。
We have described near-field photoluminescence microscopy of a field-induced quantum-dot structure based on a Be–δ-doped GaAs–Al1−xGaxAs single heterojunction with a surface square mesh gate. The local density of states in the field-induced quantum dot was mapped by measuring the spatial distribution of the near-field photoluminescence intensity, because the photoluminescence spectrum owing to the recombination of holes bound to Be accepters with electrons in an electron gas contains information on the electronic density of states. Experimentally, we observed that the electrons confined in lower energy states spatially localize in a field-induced quantum dot.