Current-voltage characteristics of a graphene-nanoribbon field-effect transistor
Current-voltage characteristics of a graphene-nanoribbon field-effect transistor
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DOI：
10.1063/1.2917284
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发表时间：
2008-05
影响因子：
3.2
通讯作者：
V. Ryzhii;M. Ryzhii;A. Satou;T. Otsuji
中科院分区：
文献类型：
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作者：
V. Ryzhii;M. Ryzhii;A. Satou;T. Otsuji
我们提出了一个分析器件模型的场效应晶体管的基础上的异质结构，其中包括一个阵列的纳米带之间的高导电基板（背栅）和控制源极-漏极电流的顶栅包覆。在弱非定域近似下，石墨烯纳米场效应晶体管（GNR-FET）的模型方程包含泊松方程。通过使用这个模型，我们发现明确的解析公式的空间分布的电势沿着沟道和GNR-FET的电流-电压特性（源漏电流的依赖关系的漏极电压以及背栅和顶栅电压）的设备的不同的几何参数。结果表明，顶栅的缩短可以导致GNR-FET的电流-电压特性的实质性修改。
We present an analytical device model for a field-effect transistor based on a heterostructure, which consists of an array of nanoribbons clad between the highly conducting substrate (the back-gate) and the top gate controlling the source-drain current. The equations of the model of a grapheme-nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. By using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back-gate and top-gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics.