Hetero-epitaxial EuO interfaces studied by analytic electron microscopy
Hetero-epitaxial EuO interfaces studied by analytic electron microscopy
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DOI：
10.1063/1.4867161
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发表时间：
2014-03-03
影响因子：
4
通讯作者：
Schlom, Darrell G.
中科院分区：
文献类型：
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作者：
Mundy, Julia A.;Hodash, Daniel;Schlom, Darrell G.
具有几乎完全自旋极化的铁磁性半导体Eu可以通过向硅中提供高效的欧姆自旋注入来实现下一代自旋电子器件。自旋注入很大程度上受注入器和硅之间界面质量的影响。在这里，我们使用原子分辨扫描电子显微镜结合电子能量损失谱来直接成像和化学表征一系列采用不同生长条件制备的EuO垂直条形Si和EuO垂直条形YAlO界面。我们确定了Eu硅化物的存在和EuO垂直条形Si界面上的无序区，这些缺陷可能会通过自旋反转散射显著降低自旋注入效率。(C)2014 AIP出版有限责任公司。
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO vertical bar Si and EuO vertical bar YAlO3 interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO vertical bar Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering. (C) 2014 AIP Publishing LLC.