Conductance behavior in nanowires with spin-orbit interaction: A numerical study
Conductance behavior in nanowires with spin-orbit interaction: A numerical study
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DOI：
10.1103/physrevb.90.235415
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发表时间：
2014-12-05
影响因子：
3.7
通讯作者：
Loss, Daniel
中科院分区：
文献类型：
--
作者：
Rainis, Diego;Loss, Daniel
我们考虑了在N-W-N混合结构中具有自旋-轨道相互作用（SOI）的半导体纳米线（W）的电子输运，其中纳米线与普通金属引线（N）接触。我们研究了系统的电导行为作为门和偏置电压，磁场，导线长度，温度和无序的函数。输运计算进行数值计算，并基于标准的递归绿色函数技术。特别是，我们有兴趣了解是否以及如何从传输行为推断SOI的强度。这是一个非常相关的问题，因为到目前为止，在这方面还没有明确的实验观察。我们发现，接触和导线之间的静电势分布的平滑度起着至关重要的作用，我们表明，在现实的制度的N-W-N设置可能会掩盖SOI的影响，并观察到一个平凡的行为与明显的消失SOI。我们确定了一个最佳的参数制度，既不太光滑，也不太突然的潜力，SOI的签名是最明显的，有和没有法布里-珀罗振荡，是最有弹性的无序和温度的影响。
We consider electronic transport through semiconducting nanowires (W) with spin-orbit interaction (SOI) in a hybrid N-W-N setup where the wire is contacted by normal-metal leads (N). We investigate the conductance behavior of the system as a function of gate and bias voltage, magnetic field, wire length, temperature, and disorder. The transport calculations are performed numerically and are based on standard recursive Green's function techniques. In particular, we are interested in understanding if and how it is possible to deduce the strength of the SOI from the transport behavior. This is a very relevant question since so far no clear experimental observation in that direction has been produced. We find that the smoothness of the electrostatic potential profile between the contacts and the wire plays a crucial role, and we show that in realistic regimes the N-W-N setup may mask the effects of SOI, and a trivial behavior with apparent vanishing SOI is observed. We identify an optimal parameter regime, with neither too smooth nor too abrupt potentials, where the signature of SOI is best visible, with and without Fabry-Perot oscillations, and is most resilient to disorder and temperature effects.