Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters
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15 kV SiC n-IGBT 的特性及其在大功率转换器中的应用注意事项
DOI：
10.1109/ecce.2013.6647027
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
S. Leslie
中科院分区：
文献类型：
--
作者：
A. Kadavelugu;S. Bhattacharya;S. Ryu;E. van Brunt;D. Grider;A. Agarwal;S. Leslie
4H-SiCn-IGBT是一种很有前途的中压功率变换功率半导体器件。目前，Cree已成功建造了15千伏n-IGBT。这些IGBT是智能电网电力转换系统和中压驱动的关键。通过使用SIC IGBT，可以消除对复杂的多电平拓扑或串联器件的需求，同时实现更低的功率损耗。本文首次报道了15kVn-IGBT的特性。对15千伏、20安的IGBT的通断过渡进行了实验研究，最高可达11千伏。这是迄今报道的单台功率半导体器件上最高的开关特性电压。包括25A(正向)和12KV(闭锁)的静态特性。给出了功率损耗与电压、电流和温度的关系。此外，还给出了使用这种超高压IGBT进行大功率变换时的基本设计考虑。文中还给出了与具有较厚场阻缓冲层的IGBT的比较评估，以显示基于功率转换器频率和额定功率规格选择IGBT设计参数的灵活性。最后，对IGBT和MOSFET的功率损耗进行了比较，以完善结果，以供参考。
The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage power conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal for the smart grid power conversion systems and medium voltage drives. The need for complex multi-level topologies or series connected devices can be eliminated, while achieving reduced power loss, by using the SiC IGBT. In this paper, characteristics of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest switching characterization voltage ever reported on a single power semiconductor device. The paper includes static characteristics up to 25 A (forward) and 12 kV (blocking). The dependency of the power loss with voltage, current and temperature are provided. In addition, the basic converter design considerations using this ultrahigh voltage IGBT for high power conversion applications are presented. Also, a comparative evaluation is reported with an IGBT with thicker field-stop buffer layer as a means to show flexibility in choosing the IGBT design parameters based on the power converter frequency and power rating specification. Finally, power loss comparison of the IGBTs and MOSFET is provided to consummate the results for a complete reference.