Photonic Lift-off Process to Fabricate Ultrathin Flexible Solar Cells
Photonic Lift-off Process to Fabricate Ultrathin Flexible Solar Cells
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DOI：
10.1021/acsami.1c12382
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发表时间：
2021-09-09
影响因子：
9.5
通讯作者：
Korgel, Brian A.
中科院分区：
文献类型：
--
作者：
Liu, Wen;Turkani, Vikram S.;Korgel, Brian A.
采用微秒时间尺度的光子剥离（PLO）工艺来制造总厚度小于20μm的机械柔性光伏器件（PV）。 PLO 是一种快速、可扩展的光热技术，用于加工极薄、机械灵活的电子和光电器件。 PLO还兼容大面积器件、卷对卷加工以及具有低温兼容性的基板。作为概念验证，PV 是使用 CuInSe2 纳米晶体墨水在环境条件下沉积在加热至 100 摄氏度的薄塑料基板上制造的。必须通过使用银纳米线 (AgNW) 层作为顶部接触层或在 ITO 层中注入 AgNW 来防止氧化铟锡 (ITO) 脆性顶部接触层在剥离过程中破裂。这种方法通常可用于提高需要透明导电接触层的各种超薄电子和光电器件中集电器的机械通用性。
A microsecond time-scale photonic lift-off (PLO) process was used to fabricate mechanically flexible photovoltaic devices (PVs) with a total thickness of less than 20 mu m. PLO is a rapid, scalable photothermal technique for processing extremely thin, mechanically flexible electronic and optoelectronic devices. PLO is also compatible with large-area devices, roll-to-roll processing, and substrates with low temperature compatibility. As a proof of concept, PVs were fabricated using CuInSe2 nanocrystal ink deposited at room temperature under ambient conditions on thin, plastic substrates heated to 100 degrees C. It was necessary to prevent cracking of the brittle top contact layer of indium tin oxide (ITO) during lift-off, either by using a layer of silver nanowires (AgNW) as the top contact or by infusing the ITO layer with AgNW. This approach could generally be used to improve the mechanical versatility of current collectors in a variety of ultrathin electronic and optoelectronic devices requiring a transparent conductive contact layer.