Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films
Phase-change control of anomalous Hall effect in ferromagnetic MnBi thin films
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DOI：
10.1063/5.0121284
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发表时间：
2022-12
影响因子：
4
通讯作者：
Siyue Zhang;Yusuke Miyazaki;T. Yokouchi;Y. Shiomi
中科院分区：
文献类型：
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作者：
Siyue Zhang;Yusuke Miyazaki;T. Yokouchi;Y. Shiomi
我们实验证明了室温下铁磁MnBi薄膜中霍尔效应的相变控制。对溅射MnBi薄膜进行缓慢冷却或淬火，得到低温相和淬火高温相两种不同的铁磁相。霍尔效应的测量表明，两相之间的异常霍尔电阻率具有不同的矫顽力和剩余物。通过优化Mn/Bi比，甚至可以反复切换霍尔电阻率的符号，这可以作为基于铁磁输运的相变存储器的概念。
We have experimentally demonstrated a phase change control of Hall effects in ferromagnetic MnBi thin films at room temperature. Two distinct ferromagnetic phases, i.e., a low-temperature phase and a quenched high-temperature phase, were obtained by slow-cooling or quenching the sputtered MnBi films. The measurement of Hall effects showed that the anomalous Hall resistivity has different coercivity and remanence between the two phases. By optimizing the Mn/Bi ratio, it is even possible to repeatedly switch the sign of Hall resistivity, which could be utilized as a concept of phase-change memory based on ferromagnetic transport.