Control of III-V nanowire crystal structure by growth parameter tuning
Control of III-V nanowire crystal structure by growth parameter tuning
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DOI：
10.1088/0268-1242/25/2/024009
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发表时间：
2010-02-01
影响因子：
1.9
通讯作者：
Samuelson, Lars
中科院分区：
文献类型：
--
作者：
Dick, Kimberly A.;Caroff, Philippe;Samuelson, Lars
在这项工作中，我们调查的金籽晶III-V纳米线的晶体结构的变化与生长参数，以获得一个有凝聚力的理解这些影响。我们研究了六种III-V材料：GaAs，InAs，GaP，InP，GaSb和InSb，在不同的生长条件下。所有这六种材料在体中都表现出立方锌尖晶石结构，但在纳米线中通常观察到孪晶面和堆垛层错以及六方纤锌矿结构。可能影响晶体结构的参数包括生长温度和压力、前体摩尔分数和V/III比、纳米线直径和表面密度以及杂质原子。我们将重点关注温度，前体摩尔分数和V/III比。我们的观察结果进行了比较，在文献中的III-V纳米线晶体结构的以前的报告，并解释现有的模型。我们建议，在晶体结构与生长参数的变化是直接相关的稳定的侧面的变化。
In this work we investigate the variation of the crystal structure of gold-seeded III-V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III-V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III-V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.