Influence of pre-surface treatment on the morphology of silicon nanowires fabricated by metal-assisted etching
Influence of pre-surface treatment on the morphology of silicon nanowires fabricated by metal-assisted etching
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DOI：
10.1016/j.apsusc.2010.08.086
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发表时间：
2011
影响因子：
6.7
通讯作者：
S. Shiu;Shin-Bo Lin;S. Hung;Ching-Fuh Lin
中科院分区：
文献类型：
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作者：
S. Shiu;Shin-Bo Lin;S. Hung;Ching-Fuh Lin
在这里，我们展示了一种改进的金属辅助蚀刻方法，以实现高度致密和均匀的硅纳米线阵列。在银银和氟化氢溶液中进行金属辅助刻蚀之前，对硅片进行预表面处理。该处理使银离子不断还原，附着在硅表面的银核上，形成致密的银纳米颗粒。银纳米粒子作为局部氧化还原中心导致形成致密的硅纳米线阵列。相反，H-封端的硅表面使得银离子在硅表面上均匀地还原以形成银薄片。经表面预处理后的硅纳米线比未经表面预处理的硅纳米线具有更高的密度。体积分数从18%提高到38%。对于长度仅为0.87μm的硅纳米线，这种改进将太阳加权反射率降低到3.3%。相比之下，未经预表面处理的硅纳米线必须长达1.812μm才能达到相同的反射率。
Herein we demonstrate an improved metal-assisted etching method to achieve highly dense and uniform silicon nanowire arrays. A pre-surface treatment was applied on a silicon wafer before the process of metal-assisted etching in silver nitrate and hydrogen fluoride solution. The treatment made silver ion continuously reduce on silver nuclei adherence on the silicon surface, leading to formation of dense silver nanoparticles. Silver nanoparticles acting as local redox centers cause the formation of dense silicon nanowire arrays. In contrast, an H-terminated silicon surface made silver ion reduce uniformly on the silicon surface to form silver flakes. The silicon nanowires fabricated with a pre-surface treatment reveals higher density than those fabricated without a pre-surface treatment. The volume fraction improves from 18 to 38%. This improvement reduces the solar-weighted reflectance to as low as 3.3% for silicon nanowires with a length of only 0.87μm. In comparison, the silicon nanowires fabricated without a pre-surface treatment have to be as long as 1.812μm to achieve the same reflectance.