Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots
复制标题
使用电子垂直耦合 InAs-GaAs 量子点工程激光增益光谱
DOI：
10.1109/lpt.2005.851949
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发表时间：
2005
影响因子：
2.6
通讯作者：
J. Chi
中科院分区：
文献类型：
--
作者：
Jyh;Ru;Jenn;Chu;G. Lin;Chiu;Chih;Hui;Tung;J. Chi
利用电子垂直耦合（EVC）InAs-GaAs量子点（QDs）的有源区获得了近1.3 μ/m的连续宽激光增益谱。宽的连续电致发光光谱，不同于传统的非耦合InAs量子点激光器，获得了约230 nm（低于阈值）与窄的激光光谱。内微分量子效率高达90%，最大测量的外微分效率为73%的条带长度为L=1 mm，和零总光损耗的阈值电流密度低至7 A/cm/sup 2/每个量子点层。
Continuous large-broad laser gain spectra near 1.3 /spl mu/m are obtained using an active region of electronic vertically coupled (EVC) InAs-GaAs quantum dots (QDs). A wide continuous electroluminescence spectrum, unlike that from conventional uncoupled InAs QD lasers, was obtained around 230 nm (below threshold) with a narrow lasing spectrum. An internal differential quantum efficiency as high as 90%, a maximum measured external differential efficiency of 73% for a stripe-length of L=1 mm, and a threshold current density for zero total optical loss as low as 7 A/cm/sup 2/ per QD layer were achieved.
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H