A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.
A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.
复制标题
DOI：
10.1039/c1jm14272k
复制
发表时间：
2012-01-28
影响因子：
--
通讯作者：
Duan X
中科院分区：
文献类型：
--
作者：
Liu L;Zhou H;Cheng R;Chen Y;Lin YC;Qu Y;Bai J;Ivanov IA;Liu G;Huang Y;Duan X
石墨烯作为一种潜在的未来电子材料引起了人们的极大兴趣。虽然已知机械剥离可以生产高质量的石墨烯薄片，但实际应用需要大面积连续的石墨烯层。催化剂辅助化学气相沉积(CVD)是制备晶片尺寸石墨烯的一种很有前途的合成方法。本文系统地研究了常压化学气相沉积(APCVD)过程中石墨烯晶区的形核和生长。参数研究表明，石墨烯微区的平均尺寸随生长温度和CH4分压的升高而增大，而微区密度随生长温度的升高而减小，与CH4分压无关。我们的研究表明，铜衬底上石墨烯微区的形核高度依赖于初始温度。为了降低单层石墨烯薄膜的磁区密度，实现高质量的全表面复盖，开发了一种初始温度较高、生长温度较低的两步合成工艺。电输运测量表明，所合成的石墨烯在室温下表现出高达3000cm2V−1 S−1的载流子迁移率。
Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm2 V−1 s−1 at room temperature.