Imaging of n ‐ TiO2 by STM Etching Effects on Photoelectrochemistry and Surface Structure
Imaging of n ‐ TiO2 by STM Etching Effects on Photoelectrochemistry and Surface Structure
复制标题
通过 STM 蚀刻对 n-TiO2 进行成像 对光电化学和表面结构的影响
DOI：
10.1149/1.2096278
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发表时间：
1988
影响因子：
3.9
通讯作者：
J. Kennedy
中科院分区：
文献类型：
--
作者：
S. Gilbert;J. Kennedy
结果新抛光的TiO 2表面（图1a）显示出锯齿状台阶状特征，高度范围为30-60 nm，偶尔有大于200 nm深的大悬崖或裂缝。该表面的光IV曲线和暗IV曲线分别示于图2的曲线a和d中。ST测量显示，在20分钟的蚀刻之后发生了显著的表面变化（图1b）。表面结构现在的特征是平坦区域和成排的滚动土丘，大多数高度低于5 nm。在此，z标度几乎是图la中的1/7。该表面的PEC特性的改善可以在图2b中看到，与Hepel等人的观察结果一致。
RESULTS A freshly polished TiO 2 surface (Fig. la) showed jagged step-like features with heights ranging from 30-60 nm, with occasional large cliffs or crevices greater than 200 nm deep. Photo and dark IV curves for this surface are shown in Fig. 2, curves a and d, respectively.STMebservations showed that dramatic surface changes had taken place following a 20 min etch (Fig. ib). The surface structure is now characterized by flat areas and rows of rolling mounds, mostly under 5 nm in height. Here, the z-scale is nearly 1/7 that in Fig. la. Improvement in the PEC characteristics of this surface can be seen in Fig. 2b, consistent with the observations of Hepel et al.