Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films
Structural and electrical characterization of amorphous lanthanum hafnium oxide thin films
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DOI：
10.1063/1.2198936
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发表时间：
2006-05
影响因子：
3.2
通讯作者：
Y. F. Loo;Stephen Taylor;R. Murray;A. C. Jones;P. Chalker
中科院分区：
文献类型：
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作者：
Y. F. Loo;Stephen Taylor;R. Murray;A. C. Jones;P. Chalker
本文介绍了一种新型前驱体混合物的金属有机化学气相沉积法沉积的镧铪氧化物薄膜的结构和电子特性。使用X射线衍射和横截面透射电子显微镜获得结构表征，并表明沉积膜和退火至900°C的膜保持有效的非晶。对使用该膜作为栅极电介质制成的金属氧化物半导体电容器的电容电压和电流电压测量表明，该膜在高达950°C的温度下沉积后退火后表现出良好的电完整性。薄膜的介电常数k被确定为20±1.5，界面态密度（在带隙中部）Dit为3.9×1011cm−2eV−1。
This paper describes the structural and electronic characterization of lanthanum hafnium oxide thin films deposited by metal organic chemical vapor deposition using a novel precursor mixture. Structural characterization is obtained using x-ray diffraction and cross-sectional transmission electron microscopy and indicates that the as-deposited films and films annealed up to 900°C remain effectively amorphous. Capacitance voltage and current voltage measurements on metal-oxide-semiconductor capacitors made using the films as a gate dielectric show the films exhibit good electrical integrity following post deposition annealing at temperatures up to 950°C. A dielectric constant, k for the films of 20±1.5 is determined and a density of interface states (at midgap) Dit of 3.9×1011cm−2eV−1 was measured.